BSC0911NDATMA1 vs ISC011N06LM5ATMA1 Comparison

Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0911NDATMA1

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 βœ“ Active
Infineon
ISC011N06LM5ATMA1

ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC0911NDATMA1 ISC011N06LM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V β€”
Configuration Dual N-Channel (2 N-CH) β€”
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) 18 A β€”
Pulsed Drain Current (IDM) 30 A β€”
Power Dissipation (PD) 1 W β€”
Package PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Channel Type N-Channel Enhancement Mode β€”
Technology OptiMOS trench MOSFET OptiMOS 5
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg value]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Part Number β€” ISC011N06LM5ATMA1
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 37 A
Continuous Drain Current (ID) at Tc β€” 288 A
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 188 W
RDS(on) max at VGS=10V β€” 1.15 mOhm
Pin Count β€” 8
Operating Temperature Range β€” -55C to +175C
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]

Datasheets & Resources

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