BSC0921NDIATMA1 vs BSF134N10NJ3GXUMA1 Comparison

Detailed side-by-side comparison of BSC0921NDIATMA1 by Infineon and BSF134N10NJ3GXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0921NDIATMA1 BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 βœ“ Active
Infineon
BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon

BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon

BSF134N10NJ3GXUMA1 βœ“ Active

Specification Comparison

Parameter BSC0921NDIATMA1 BSF134N10NJ3GXUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 25V (N-channel) Trench-gate OptiMOS planar
Configuration Dual N-Channel MOSFET Array Single with built-in diode
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) 17 A (per channel) β€”
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) β€”
Total Power Dissipation (PD) 1 W β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] β€”
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) [DATA_NEEDED: Qg value]
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) β€”
Package PG-TISON-8 (8-pin, exposed pad) MG-WDSON-2 (CanPAK M)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
RoHS Status Compliant Compliant
MSL Level 1 (per Infineon OptiMOS family) [DATA_NEEDED: MSL rating]
Primary Application Synchronous buck converters, VRMs, POL regulators β€”
Series β€” OptiMOS 100 V
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 9 A
Continuous Drain Current (ID) at TC=25Β°C β€” 40 A
Power Dissipation (PD) at TA=25Β°C β€” 2.2 W
Power Dissipation (PD) at TC=25Β°C β€” 43 W
Terminal Position β€” Bottom
Terminal Finish β€” Silver Nickel
Operating Temperature Range β€” -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
RDS(on) at VGS=10V β€” [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery β€” [DATA_NEEDED: trr value]

Datasheets & Resources

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