BSC093N15NS5ATMA1 vs BSC036NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC036NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΞ© 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 β ActiveInfineon
BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC093N15NS5ATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.83 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at TC | 87 A | β |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΞ© | β |
| Power Dissipation (PD) at TC | 139 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8-7 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | ROHS3 Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Halogen Free | [DATA_NEEDED: halogen free status] | β |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Pulsed Drain Current (IDM) | β | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | β | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | β | 45 nC |
| Rise Time (tr typ) | β | 13 ns |
| Fall Time (tf typ) | β | 11 ns |
| Power Dissipation (PD max, Tc=25C) | β | 156 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 0.8 C/W |