BSC093N15NS5ATMA1 vs BSC077N12NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΞ© 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 β ActiveInfineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC093N15NS5ATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.83 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at TC | 87 A | β |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΞ© | β |
| Power Dissipation (PD) at TC | 139 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Halogen Free | [DATA_NEEDED: halogen free status] | β |
| Part Family | β | OptiMOS 3 (120 V) |
| Transistor Type | β | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | β | 120 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | β | 13.4 A |
| Continuous Drain Current (ID) at Tc | β | 98 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | β | 7.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | β | 139 W |
| Operating Junction Temperature | β | -55C to +150C |
| Pin Count | β | 8 |
| Automotive Grade | β | Yes (per Infineon part number suffix / datasheet) |