BSC093N15NS5ATMA1 vs BSC100N10NSFGATMA1 Comparison
Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΞ© 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 β ActiveInfineon
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveSpecification Comparison
| Parameter | BSC093N15NS5ATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.83 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | MOSFET (Metal Oxide) |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at TC | 87 A | β |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΞ© | β |
| Power Dissipation (PD) at TC | 139 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Halogen Free | [DATA_NEEDED: halogen free status] | β |
| Series | β | OptiMOS |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID), Ta | β | 11.4 A |
| Continuous Drain Current (ID), Tc | β | 90 A |
| Power Dissipation (PD), Tc | β | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | β | 10 mΞ© |
| Gate Drive Voltage (recommended) | β | 10 V (for rated RDS(on)) |