BSC093N15NS5ATMA1 vs IQD005N04NM6CGATMA1 Comparison

Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and IQD005N04NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD005N04NM6CGATMA1

IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 βœ“ Active

Specification Comparison

Parameter BSC093N15NS5ATMA1 IQD005N04NM6CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.83 $1.62
Manufacturer Infineon Technologies β€”
Technology OptiMOS 5 150V OptiMOS 6 (trench FET)
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) Max 150 V β€”
Continuous Drain Current (ID) at TC 87 A β€”
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΞ© β€”
Power Dissipation (PD) at TC 139 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-7) PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²)
Mounting Type Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 Β°C to +150 Β°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Halogen Free [DATA_NEEDED: halogen free status] β€”
Drain-to-Source Voltage (VDS) β€” 40 V
Gate-to-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
RDS(on) Typical β€” 0.5 mΞ©
Continuous Drain Current (ID) at Ta β€” 58 A
Continuous Drain Current (ID) at Tc β€” 610 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM pulsed rating]
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 333 W
Pin Count β€” 9
Lead-Free β€” Yes
Source Configuration β€” Source-Down (bottom-side source for PCB heatsinking)

Datasheets & Resources

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