BSC094N06LS5ATMA1 vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β ActiveInfineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC094N06LS5ATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | β |
| Technology | OptiMOSβ’ 5 (logic-level) | N-Channel Trench MOSFET (OptiMOS) |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 47 A | β |
| Continuous Drain Current (ID) at TC=100Β°C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 9.4 mΞ© | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25Β°C | 36 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Part Family | β | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Continuous Drain Current (ID) at Ta | β | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | β | 80 mJ |
| Power Dissipation (PD) at Tc | β | 69 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Operating Temperature Range | β | -55C to +150C |
| Moisture Sensitivity Level (MSL) | β | 1 |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single N-Channel with Built-in Diode |