BSC094N06LS5ATMA1 vs IPD060N03LGATMA1 Comparison
Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and IPD060N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β Active
Specification Comparison
| Parameter | BSC094N06LS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | β |
| Technology | OptiMOSβ’ 5 (logic-level) | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 47 A | β |
| Continuous Drain Current (ID) at TC=100Β°C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 9.4 mΞ© | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25Β°C | 36 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | -55C to +175C |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (Unlimited) |
| Product Family | β | OptiMOS 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID, TC=25C) | β | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | β | 200 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | β | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | β | 21 nC |
| Output Charge (Qoss, typ) | β | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | β | 56 W |
| Thermal Resistance Junction-to-Case (RthJC, max) | β | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | β | 62 C/W |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Packing | β | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | β | Not qualified |
| Technology / Generation | β | OptiMOS 30V, trench MOSFET |