BSC097N06NSATMA1 vs IPD90N04S403ATMA1 Comparison

Detailed side-by-side comparison of BSC097N06NSATMA1 by Infineon and IPD90N04S403ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC097N06NSATMA1 BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 βœ“ Active
Infineon
IPD90N04S403ATMA1 IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD90N04S403ATMA1 βœ“ Active

Specification Comparison

Parameter BSC097N06NSATMA1 IPD90N04S403ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Part Status Active β€”
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at Tc=25C 46 A β€”
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] β€”
RDS(on) max at VGS=10 V 9.7 mOhm β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] β€”
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] β€”
Power Dissipation at Ta=25C 2.5 W β€”
Power Dissipation at Tc=25C 36 W β€”
Operating Junction Temperature -55C to +150C -55C to +175C
Package / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) Trench MOSFET (OptiMOS-T2)
RoHS Status Compliant β€”
MSL Level 1 (Unlimited) MSL1 (peak reflow up to 260C)
Avalanche Rated Yes (EAS per datasheet) β€”
Product Family β€” OptiMOS-T2
Channel Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D, Tc) β€” 90 A
On-State Resistance (R_DS(on)) β€” 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) β€” 94 W
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Package β€” PG-TO252-3-313 (DPAK)
AEC-Q101 Qualification β€” Qualified (automotive grade)
Avalanche Tested β€” 100% avalanche-tested
RoHS Compliance β€” Compliant (Green Package)

Datasheets & Resources

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