BSC098N10NS5ATMA1 vs BSC016N06NSTATMA1 Comparison
Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and BSC016N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveInfineon
BSC016N06NSTATMA1
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
BSC016N06NSTATMA1 β ActiveSpecification Comparison
| Parameter | BSC098N10NS5ATMA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.92 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25C) | 60 A | 100 A |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25C) | 69 W | β |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | β |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | β |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | β |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55 C to +150 C |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Shipping Packaging | Tape & Reel (T/R) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC016N06NSTATMA1 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta=25C) | β | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | β | 1.6 mOhm |
| Power Dissipation (Tc) | β | 167 W |
| Lead-Free | β | Yes |
| Series | β | OptiMOS |