BSC098N10NS5ATMA1 vs BSC070N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and BSC070N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β Active
Specification Comparison
| Parameter | BSC098N10NS5ATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.68 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25C) | 60 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg] |
| Power Dissipation (Tc=25C) | 69 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | β |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | β |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | β |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel (T/R) | β |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 80 A |
| RDS(on) max @ VGS=10V | β | 7 mOhm |
| Power Dissition at TC=25C (Ptot) | β | 83 W |
| Power Dissipation at TA=25C | β | 2.5 W |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| Lead-Free | β | Yes |
| Typical Application | β | Synchronous rectification in SMPS |