BSC098N10NS5ATMA1 vs BSC097N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β Active
Specification Comparison
| Parameter | BSC098N10NS5ATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.38 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25C) | 60 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM peak value] |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25C) | 69 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | β |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | β |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | β |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (Unlimited) |
| Shipping Packaging | Tape & Reel (T/R) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Part Status | β | Active |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 46 A |
| Continuous Drain Current (ID) at Ta=25C | β | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| RDS(on) max at VGS=10 V | β | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 36 W |
| Operating Junction Temperature | β | -55C to +150C |
| Package / Case | β | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | β | Yes (EAS per datasheet) |