BSC098N10NS5ATMA1 vs BSC190N15NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and BSC190N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC098N10NS5ATMA1

BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon

BSC098N10NS5ATMA1 βœ“ Active
Infineon
BSC190N15NS3GATMA1

BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon

BSC190N15NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC098N10NS5ATMA1 BSC190N15NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.98
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 3 (N-Channel)
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc=25C) 60 A β€”
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 2.5 V to 3.5 V
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) 69 W β€”
Power Dissipation (Ta) 2.5 W β€”
Diode Continuous Forward Current (IS) 63 A (Tc=25C) β€”
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) β€”
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) β€”
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) β€”
Operating Temperature Range [DATA_NEEDED: Tj min/max] -55 C to +150 C
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-1 (TDSON-8 EP)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1
Shipping Packaging Tape & Reel (T/R) β€”
Continuous Drain Current (ID) at Tc=25C β€” 50 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max at VGS=10V β€” 19 mOhm
On-Resistance RDS(on) typ at VGS=10V β€” [DATA_NEEDED: RDS(on) typical at 10V]
Power Dissipation (PD) at Tc=25C β€” 125 W

Datasheets & Resources

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