BSC098N10NS5ATMA1 vs IPD78CN10NGATMA1 Comparison
Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and IPD78CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β Active
Specification Comparison
| Parameter | BSC098N10NS5ATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.78 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 2 Power-Transistor |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25C) | 60 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25C) | 69 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | β |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | β |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | β |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel (T/R) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 2 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25C | β | 13 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 78 mOhm |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | β | 31 W |
| Operating Junction Temperature Max | β | 175 C |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Pin Count | β | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | β | Pb-free (Matte Tin) |
| RoHS Compliance | β | Compliant |
| JEDEC Qualification | β | Qualified per JEDEC1 for target application |