BSC0993NDATMA1 vs BSC042NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0993NDATMA1
BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon
BSC0993NDATMA1 β ActiveInfineon
BSC042NE7NS3GATMA1
BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
BSC042NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC0993NDATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | β |
| Configuration | Dual N-Channel (Array) | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) @ Ta | 17 A | β |
| Package | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 3 |
| Channel Mode | Enhancement | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| ESD Protection | Yes (integrated) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Part Number | β | BSC042NE7NS3GATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at Ta | β | 19 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.7 V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |