BSC0993NDATMA1 vs BSC0502NSIATMA1 Comparison

Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0993NDATMA1

BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon

BSC0993NDATMA1 βœ“ Active
Infineon
BSC0502NSIATMA1

BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon

BSC0502NSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC0993NDATMA1 BSC0502NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.85
Manufacturer Infineon Technologies β€”
Product Series OptiMOS 5 30V β€”
Configuration Dual N-Channel (Array) β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (Id) @ Ta 17 A β€”
Package PG-TISON-8 PG-TDSON-8 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench MOSFET)
Channel Mode Enhancement β€”
Operating Temperature Range -55C to +150C (junction) -55C to +150C
ESD Protection Yes (integrated) β€”
MSL Level [DATA_NEEDED: MSL level] β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) at TC β€” 100 A
Continuous Drain Current (ID) at TA β€” 26 A
RDS(on) Max at VGS=10V β€” 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ β€” 9.0 nC
Output Charge QOSS Typ β€” 13.5 nC
Power Dissipation at TA (Ta=25C) β€” 2.5 W
Power Dissipation at TC (Tc=25C) β€” 43 W
Gate Threshold Voltage VGS(th) Typ β€” [DATA_NEEDED: VGS(th) typical value]

Datasheets & Resources

Browse All Products Create BOM Request Quote