BSC0993NDATMA1 vs BSC360N15NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC360N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0993NDATMA1

BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon

BSC0993NDATMA1 βœ“ Active
Infineon
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon

BSC360N15NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC0993NDATMA1 BSC360N15NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 30V β€”
Configuration Dual N-Channel (Array) β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (Id) @ Ta 17 A β€”
Package PG-TISON-8 PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 3 (N-Channel Trench MOSFET)
Channel Mode Enhancement β€”
Operating Temperature Range -55C to +150C (junction) -55Β°C to +150Β°C (junction)
ESD Protection Yes (integrated) β€”
MSL Level [DATA_NEEDED: MSL level] 1
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Part Number β€” BSC360N15NS3GATMA1
Drain-Source Voltage (VDS) β€” 150 V
Continuous Drain Current (ID) at Tc β€” 33 A
On-Resistance RDS(on) max at VGS=10V β€” 36 mOhm
Power Dissipation (PD) at Tc β€” 74 W
Gate Threshold Voltage (VGS th) typ β€” 3.0 V
Total Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg value]
Avalanche Energy Rated β€” Yes

Datasheets & Resources

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