BSC100N10NSFGATMA1 vs BSC042NE7NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC100N10NSFGATMA1

BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon

BSC100N10NSFGATMA1 βœ“ Active
Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC100N10NSFGATMA1 BSC042NE7NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.49 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 3
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID), Ta 11.4 A β€”
Continuous Drain Current (ID), Tc 90 A β€”
Power Dissipation (PD), Tc 156 W β€”
Drain-Source On-Resistance (RDS(on)) max 10 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55C to +150C
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) β€”
RoHS Status Compliant Compliant
Part Number β€” BSC042NE7NS3GATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 19 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10V β€” 4.2 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Gate Threshold Voltage (VGS(th)) typ β€” 1.7 V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 125 W
MSL Level β€” 1

Datasheets & Resources

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