BSC100N10NSFGATMA1 vs BSC118N10NSGATMA1 Comparison
Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveInfineon
BSC118N10NSGATMA1
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC100N10NSFGATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.49 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A | β |
| Continuous Drain Current (ID), Tc | 90 A | β |
| Power Dissipation (PD), Tc | 156 W | β |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 2 |
| Mode | β | Enhancement (Normal Level) |
| Continuous Drain Current (ID) at Ta=25C | β | 11 A |
| Continuous Drain Current (ID) at Tc=25C | β | 71 A |
| Power Dissipation (PD) at Tc=25C | β | 114 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |
| JEDEC Qualification | β | Qualified per target application |
| Target Application | β | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | β | Excellent (per datasheet) |