BSC100N10NSFGATMA1 vs BSC265N10LSFGATMA1 Comparison

Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC265N10LSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC100N10NSFGATMA1

BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon

BSC100N10NSFGATMA1 βœ“ Active

Specification Comparison

Parameter BSC100N10NSFGATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.49 $0.72
Manufacturer Infineon Technologies β€”
Series OptiMOS OptiMOS 2
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (TrenchFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A β€”
Continuous Drain Current (ID), Tc 90 A β€”
Power Dissipation (PD), Tc 156 W β€”
Drain-Source On-Resistance (RDS(on)) max 10 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical/min]
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C (junction)
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) β€”
RoHS Status Compliant Compliant
Continuous Drain Current (ID, Tc) β€” 40 A
Continuous Drain Current (ID, Ta) β€” 6.5 A
Power Dissipation (PD, Tc) β€” 78 W
On-State Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
MSL Level β€” 1 (per JEDEC J-STD-020)
Lead-Free β€” Yes
Avalanche Rated β€” Yes

Datasheets & Resources

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