BSC109N10NS3GATMA1 vs ISZ230N10NM6ATMA1 Comparison
Detailed side-by-side comparison of BSC109N10NS3GATMA1 by Infineon and ISZ230N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
BSC109N10NS3GATMA1 β ActiveInfineon
ISZ230N10NM6ATMA1
ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
ISZ230N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC109N10NS3GATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.71 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 63 A | β |
| Power Dissipation (PD, Tc) | 78 W | β |
| RDS(on) Max | 10.9 mOhm at VGS=10 V | β |
| Technology | OptiMOS 3 | OptiMOS 6 trench MOSFET |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg) | 26 nC | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +150 Β°C (junction) |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes | β |
| Lead-Free | Yes | β |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (Ta) | β | 7.7 A |
| Continuous Drain Current (Tc) | β | 31 A |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 48 W |
| On-Resistance RDS(on) at VGS=10V | β | 23 mΞ© (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | β | 3.3 V (typ at 13 Β΅A) |
| Gate Drive Voltage (recommended) | β | 10 V |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| Family | β | OptiMOS 6 (100V class) |