BSC117N08NS5ATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active
Infineon
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC117N08NS5ATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC117N08NS5ATMA1 BSC052N08NS5ATMA1
Technology OptiMOS 5 OptiMOS 5
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) max 80 V β€”
Continuous Drain Current (ID) max 49 A (Tc) β€”
On-State Resistance (RDS(on)) max 11.7 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 50 W β€”
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Operating Temperature Range -55 C to +150 C (typical MOSFET junction) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level 1 1 (unlimited)
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID, Tc) β€” 95 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 5.2 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage VGS(th) typ β€” 2.5-3.0 V
Total Power Dissipation (Tc) β€” 83 W
Total Power Dissipation (Ta) β€” 2.5 W
Operating Junction Temperature β€” -55C to +150C

Datasheets & Resources

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