BSC117N08NS5ATMA1 vs BSC076N06NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC117N08NS5ATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | N-Channel Trench MOSFET |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) max | 49 A (Tc) | β |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 50 W | 69 W |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) | -55C to +150C |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | 1 | 1 (unlimited) |
| Product Family | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25C | β | 50 A |
| On-Resistance RDS(on) max at VGS=10V | β | 7.6 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | β | 10.4 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| RoHS Compliance | β | Compliant |
| Halogen-Free | β | Yes (per Infineon product page) |