BSC117N08NS5ATMA1 vs BSC077N12NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveInfineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC117N08NS5ATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) max | 49 A (Tc) | β |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 50 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 8 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | 1 |
| Part Family | β | OptiMOS 3 (120 V) |
| Drain-Source Voltage (VDS) | β | 120 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | β | 13.4 A |
| Continuous Drain Current (ID) at Tc | β | 98 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | β | 7.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | β | 139 W |
| Operating Junction Temperature | β | -55C to +150C |
| Automotive Grade | β | Yes (per Infineon part number suffix / datasheet) |