BSC117N08NS5ATMA1 vs IAUT300N08S5N012ATMA2 Comparison

Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active
Infineon
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 βœ“ Active

Specification Comparison

Parameter BSC117N08NS5ATMA1 IAUT300N08S5N012ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $2.20
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC117N08NS5ATMA1 β€”
Technology OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) max 80 V β€”
Continuous Drain Current (ID) max 49 A (Tc) β€”
On-State Resistance (RDS(on)) max 11.7 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 50 W β€”
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-HSOF-8-1 (8-pin HSOF with drain tab)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Operating Temperature Range -55 C to +150 C (typical MOSFET junction) -55 Β°C to +175 Β°C (TJ)
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level 1 [DATA_NEEDED: MSL level]
Product Family β€” OptiMOSβ„’-5 80 V
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 300 A
Pulsed Drain Current (IDM) β€” 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V β€” 1.2 mΞ©
Maximum Power Dissipation (PD, Tc) β€” 375 W
Gate-to-Source Voltage (VGS) β€” Β±20 V
Automotive Qualification β€” AEC-Q101 qualified
RoHS Compliance β€” Compliant

Datasheets & Resources

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