BSC117N08NS5ATMA1 vs IPD33CN10NGATMA1 Comparison
Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and IPD33CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveInfineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveSpecification Comparison
| Parameter | BSC117N08NS5ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.32 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC117N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | OptiMOS (Trench) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) max | 49 A (Tc) | β |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 50 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TO252-3 (DPAK), Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 3 (Gate, Drain, Source) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: typical Qg] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) | -55C to +175C (TJ) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | 1 | 1 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 27 A |
| Power Dissipation (PD, Tc) | β | 58 W |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |