BSC118N10NSGATMA1 vs BSC100N10NSFGATMA1 Comparison
Detailed side-by-side comparison of BSC118N10NSGATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveInfineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveSpecification Comparison
| Parameter | BSC118N10NSGATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 2 | β |
| FET Type | N-Channel | N-Channel |
| Mode | Enhancement (Normal Level) | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | β |
| Continuous Drain Current (ID) at Tc=25C | 71 A | β |
| Power Dissipation (PD) at Tc=25C | 114 W | β |
| Package | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C | β |
| Technology | Trench MOSFET | MOSFET (Metal Oxide) |
| Lead Plating | Pb-free | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| JEDEC Qualification | Qualified per target application | β |
| Target Application | High-frequency SMPS, synchronous rectification | β |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | β |
| Series | β | OptiMOS |
| Continuous Drain Current (ID), Ta | β | 11.4 A |
| Continuous Drain Current (ID), Tc | β | 90 A |
| Power Dissipation (PD), Tc | β | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | β | 10 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | β | 10 V (for rated RDS(on)) |