BSC118N10NSGATMA1 vs BSC146N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC118N10NSGATMA1 by Infineon and BSC146N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC118N10NSGATMA1
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveInfineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC118N10NSGATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 2 | β |
| FET Type | N-Channel | β |
| Mode | Enhancement (Normal Level) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Ta=25C | 11 A | β |
| Continuous Drain Current (ID) at Tc=25C | 71 A | β |
| Power Dissipation (PD) at Tc=25C | 114 W | β |
| Package | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C | β |
| Technology | Trench MOSFET | OptiMOS 5 (logic-level) |
| Lead Plating | Pb-free | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| JEDEC Qualification | Qualified per target application | β |
| Target Application | High-frequency SMPS, synchronous rectification | β |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 44 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Operating Temperature Range | β | -55 C to +150 C (TJ max) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |