BSC118N10NSGATMA1 vs BSC265N10LSFGATMA1 Comparison

Detailed side-by-side comparison of BSC118N10NSGATMA1 by Infineon and BSC265N10LSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC118N10NSGATMA1

BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon

BSC118N10NSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC118N10NSGATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.72
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 2 β€”
FET Type N-Channel N-Channel
Mode Enhancement (Normal Level) β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Ta=25C 11 A β€”
Continuous Drain Current (ID) at Tc=25C 71 A β€”
Power Dissipation (PD) at Tc=25C 114 W β€”
Package PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +150 C β€”
Technology Trench MOSFET OptiMOS 2 (TrenchFET)
Lead Plating Pb-free β€”
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
JEDEC Qualification Qualified per target application β€”
Target Application High-frequency SMPS, synchronous rectification β€”
Gate Charge x RDS(on) FOM Excellent (per datasheet) β€”
Continuous Drain Current (ID, Tc) β€” 40 A
Continuous Drain Current (ID, Ta) β€” 6.5 A
Power Dissipation (PD, Tc) β€” 78 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Operating Temperature Range β€” -55 C to +150 C (junction)
MSL Level β€” 1 (per JEDEC J-STD-020)
Lead-Free β€” Yes
Avalanche Rated β€” Yes
Series β€” OptiMOS 2

Datasheets & Resources

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