BSC120N03LSGATMA1 vs BSC0906NSATMA1 Comparison
Detailed side-by-side comparison of BSC120N03LSGATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveInfineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC120N03LSGATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 3 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 12 A | β |
| Continuous Drain Current (ID) at Tc=25C | 39 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | β |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 28 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C (junction, typical) |
| Package | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 63 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 30 W |
| Technology | β | OptiMOS |
| RDS(on) max (typical reference) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg @ VGS=10V] |
| Pin Count | β | 8 |