BSC123N08NS3GATMA1 vs BSC042NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC123N08NS3GATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveInfineon
BSC042NE7NS3GATMA1
BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
BSC042NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC123N08NS3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | β |
| Channel Type | N-Channel | β |
| Configuration | Single with built-in body diode | β |
| Maximum Drain-Source Voltage (VDS) | 80 V | β |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | β |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | β |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc) | 66 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | β |
| Part Number | β | BSC042NE7NS3GATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at Ta | β | 19 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.7 V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| Operating Temperature Range | β | -55C to +150C |