BSC123N08NS3GATMA1 vs BSC100N10NSFGATMA1 Comparison
Detailed side-by-side comparison of BSC123N08NS3GATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveInfineon
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveSpecification Comparison
| Parameter | BSC123N08NS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | β |
| Channel Type | N-Channel | β |
| Configuration | Single with built-in body diode | β |
| Maximum Drain-Source Voltage (VDS) | 80 V | β |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | β |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | β |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc) | 66 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | β |
| Series | β | OptiMOS |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID), Ta | β | 11.4 A |
| Continuous Drain Current (ID), Tc | β | 90 A |
| Power Dissipation (PD), Tc | β | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | β | 10 mΞ© |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | β | 10 V (for rated RDS(on)) |