BSC123N08NS3GATMA1 vs IAUC64N08S5L075ATMA1 Comparison
Detailed side-by-side comparison of BSC123N08NS3GATMA1 by Infineon and IAUC64N08S5L075ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveInfineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 β ActiveSpecification Comparison
| Parameter | BSC123N08NS3GATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | β |
| Channel Type | N-Channel | β |
| Configuration | Single with built-in body diode | β |
| Maximum Drain-Source Voltage (VDS) | 80 V | β |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | β |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | β |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc) | 66 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant with exemption | β |
| Automotive Qualified | Yes (AEC-Q101) | β |
| Part Number | β | IAUC64N08S5L075ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOSβ’ 5 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | β | 7.5 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Power Dissipation (PD) at TC=25Β°C | β | 75 W |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant |
| Number of Pins | β | 8 |