BSC123N08NS3GATMA1 vs IAUCN04S7N009ATMA1 Comparison
Detailed side-by-side comparison of BSC123N08NS3GATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveInfineon
IAUCN04S7N009ATMA1
IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon
IAUCN04S7N009ATMA1 β ActiveSpecification Comparison
| Parameter | BSC123N08NS3GATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | β |
| Channel Type | N-Channel | β |
| Configuration | Single with built-in body diode | Single N-Channel |
| Maximum Drain-Source Voltage (VDS) | 80 V | β |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | β |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | β |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc) | 66 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | β |
| Series | β | OptiMOS 7 |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 175 A |
| R_DS(on) Max @ V_GS = 10 V | β | 0.96 mΞ© |
| Gate Drive Voltage (V_GS) | β | 10 V |
| Operating Temperature | β | -55C to +175C |
| Qualification | β | AEC-Q101 (Automotive) |
| Supplier Device Package | β | PG-TDSON-8-34 |