BSC12DN20NS3GATMA1 vs BSC005N03LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC12DN20NS3GATMA1 by Infineon and BSC005N03LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 β Active
Specification Comparison
| Parameter | BSC12DN20NS3GATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID, Tc) | 11.3 A | β |
| Power Dissipation (PD, Tc) | 50 W | β |
| Package | PG-TDSON-8-5 | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Technology | OptiMOS power MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | β |
| Pin Count | 8 | β |
| Part Number | β | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 42 A |
| Continuous Drain Current (ID) at Tc | β | 433 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | β | 0.55 mΞ© at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | β | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 188 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Polarity | β | N-Channel |