BSC12DN20NS3GATMA1 vs IPT017N12NM6ATMA1 Comparison

Detailed side-by-side comparison of BSC12DN20NS3GATMA1 by Infineon and IPT017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon

BSC12DN20NS3GATMA1 βœ“ Active
Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC12DN20NS3GATMA1 IPT017N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $1.85
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 200V β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID, Tc) 11.3 A β€”
Power Dissipation (PD, Tc) 50 W β€”
Package PG-TDSON-8-5 PG-HSOF-8 (TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold typical] β€”
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Technology OptiMOS power MOSFET OptiMOS 6
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Configuration Single N-channel β€”
Pin Count 8 8 + tab
Part Number β€” IPT017N12NM6ATMA1
Continuous Drain Current (ID) at Ta β€” 29 A
Continuous Drain Current (ID) at Tc β€” 331 A
On-Resistance RDS(on) max β€” 1.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 395 W
Operating Temperature β€” -55C to +175C
Packaging β€” Tape & Reel

Datasheets & Resources

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