BSC146N10LS5ATMA1 vs BSZ150N10LS3GATMA1 Comparison
Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and BSZ150N10LS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveInfineon
BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
BSZ150N10LS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC146N10LS5ATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.65 |
| Technology | OptiMOS 5 (logic-level) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 14.6 mOhm | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 52 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ max) | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ150N10LS3GATMA1 |
| Technology / Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25 Β°C) | β | 40 A |
| On-Resistance RDS(on) max | β | 15 mΞ© |
| Power Dissipation (TA=25 Β°C) | β | 2.1 W |
| Power Dissipation (TC=25 Β°C) | β | 63 W |
| Operating Temperature Range (TJ) | β | -55 Β°C to +150 Β°C |
| Gate Threshold VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | β | Yes (lead-free, 260 Β°C peak reflow compatible) |