BSC190N15NS3GATMA1 vs BSC12DN20NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC190N15NS3GATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 β ActiveInfineon
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC190N15NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.61 |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | β |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at Tc=25C | 125 W | β |
| Operating Temperature Range | -55 C to +150 C | [DATA_NEEDED: operating temperature range] |
| Package | PG-TDSON-8-1 (TDSON-8 EP) | PG-TDSON-8-5 |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 200V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 11.3 A |
| Power Dissipation (PD, Tc) | β | 50 W |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Configuration | β | Single N-channel |
| Pin Count | β | 8 |