BSC190N15NS3GATMA1 vs BSC360N15NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC190N15NS3GATMA1 by Infineon and BSC360N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC190N15NS3GATMA1

BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon

BSC190N15NS3GATMA1 βœ“ Active
Infineon
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon

BSC360N15NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC190N15NS3GATMA1 BSC360N15NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.82
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 50 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max 20 V β€”
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V β€”
On-Resistance RDS(on) max at VGS=10V 19 mOhm 36 mOhm
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (PD) at Tc=25C 125 W β€”
Operating Temperature Range -55 C to +150 C -55Β°C to +150Β°C (junction)
Package PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1
Manufacturer β€” Infineon Technologies
Part Number β€” BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc β€” 33 A
Power Dissipation (PD) at Tc β€” 74 W
Gate Threshold Voltage (VGS th) typ β€” 3.0 V
Total Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg value]
Avalanche Energy Rated β€” Yes
Lead-Free β€” Yes

Datasheets & Resources

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