BSC190N15NS3GATMA1 vs IRFS52N15DTRLP Comparison
Detailed side-by-side comparison of BSC190N15NS3GATMA1 by Infineon and IRFS52N15DTRLP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 β Active
Specification Comparison
| Parameter | BSC190N15NS3GATMA1 | IRFS52N15DTRLP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.62 |
| Technology | OptiMOS 3 (N-Channel) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at Tc=25C | 50 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | 2.0 V to 4.0 V (typical 3 V) |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | β |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: total gate charge in nC] |
| Power Dissipation (PD) at Tc=25C | 125 W | β |
| Operating Temperature Range | -55 C to +150 C | -55 C to +175 C (junction) |
| Package | PG-TDSON-8-1 (TDSON-8 EP) | D2PAK (TO-263) surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, typical for D2PAK) |
| FET Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | β | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | β | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | β | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | β | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | β | 32 mOhm |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | β | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | β | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | [DATA_NEEDED: RthJA in C/W] |
| Pin Count | β | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | β | Yes (matte tin) |