BSC265N10LSFGATMA1 vs BSC027N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC265N10LSFGATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 β ActiveInfineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndSpecification Comparison
| Parameter | BSC265N10LSFGATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $1.10 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 40 A | β |
| Continuous Drain Current (ID, Ta) | 6.5 A | β |
| Power Dissipation (PD, Tc) | 78 W | β |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 5 (100V) |
| Package | PG-TDSON-8-1 (TDSON-8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | [DATA_NEEDED: Tj min/max] |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| Series | OptiMOS 2 | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC027N10NS5ATMA1 |
| Channel Type | β | N-Channel |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | β | 23 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 2.7 mOhm |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 214 W |
| Qualification | β | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |