BSC265N10LSFGATMA1 vs BSC100N10NSFGATMA1 Comparison

Detailed side-by-side comparison of BSC265N10LSFGATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC265N10LSFGATMA1 BSC100N10NSFGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $1.49
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 40 A β€”
Continuous Drain Current (ID, Ta) 6.5 A β€”
Power Dissipation (PD, Tc) 78 W β€”
Technology OptiMOS 2 (TrenchFET) MOSFET (Metal Oxide)
Package PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: typical VGS(th) value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Operating Temperature Range -55 C to +150 C (junction) -55C to +150C (junction)
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Avalanche Rated Yes β€”
Series OptiMOS 2 OptiMOS
Manufacturer β€” Infineon Technologies
Continuous Drain Current (ID), Ta β€” 11.4 A
Continuous Drain Current (ID), Tc β€” 90 A
Power Dissipation (PD), Tc β€” 156 W
Drain-Source On-Resistance (RDS(on)) max β€” 10 mΞ©
Gate Drive Voltage (recommended) β€” 10 V (for rated RDS(on))

Datasheets & Resources

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