BSC265N10LSFGATMA1 vs BSC118N10NSGATMA1 Comparison

Detailed side-by-side comparison of BSC265N10LSFGATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC118N10NSGATMA1

BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon

BSC118N10NSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC265N10LSFGATMA1 BSC118N10NSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.78
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 40 A β€”
Continuous Drain Current (ID, Ta) 6.5 A β€”
Power Dissipation (PD, Tc) 78 W β€”
Technology OptiMOS 2 (TrenchFET) Trench MOSFET
Package PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-1 (TDSON EP, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Operating Temperature Range -55 C to +150 C (junction) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Avalanche Rated Yes β€”
Series OptiMOS 2 β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 2
Mode β€” Enhancement (Normal Level)
Continuous Drain Current (ID) at Ta=25C β€” 11 A
Continuous Drain Current (ID) at Tc=25C β€” 71 A
Power Dissipation (PD) at Tc=25C β€” 114 W
Operating Junction Temperature β€” -55 C to +150 C
Lead Plating β€” Pb-free
Halogen-Free β€” Yes
JEDEC Qualification β€” Qualified per target application
Target Application β€” High-frequency SMPS, synchronous rectification
Gate Charge x RDS(on) FOM β€” Excellent (per datasheet)

Datasheets & Resources

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