BSC265N10LSFGATMA1 vs BSC360N15NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC265N10LSFGATMA1 by Infineon and BSC360N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC265N10LSFGATMA1 BSC360N15NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.82
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc) 40 A β€”
Continuous Drain Current (ID, Ta) 6.5 A β€”
Power Dissipation (PD, Tc) 78 W β€”
Technology OptiMOS 2 (TrenchFET) OptiMOS 3 (N-Channel Trench MOSFET)
Package PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Operating Temperature Range -55 C to +150 C (junction) -55Β°C to +150Β°C (junction)
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes β€”
Series OptiMOS 2 β€”
Manufacturer β€” Infineon Technologies
Part Number β€” BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc β€” 33 A
On-Resistance RDS(on) max at VGS=10V β€” 36 mOhm
Power Dissipation (PD) at Tc β€” 74 W
Gate Threshold Voltage (VGS th) typ β€” 3.0 V
Total Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg value]
Avalanche Energy Rated β€” Yes

Datasheets & Resources

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