BSC265N10LSFGATMA1 vs IAUC50N08S5L096ATMA1 Comparison

Detailed side-by-side comparison of BSC265N10LSFGATMA1 by Infineon and IAUC50N08S5L096ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC50N08S5L096ATMA1

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active

Specification Comparison

Parameter BSC265N10LSFGATMA1 IAUC50N08S5L096ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.98
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID, Tc) 40 A β€”
Continuous Drain Current (ID, Ta) 6.5 A β€”
Power Dissipation (PD, Tc) 78 W β€”
Technology OptiMOS 2 (TrenchFET) β€”
Package PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Operating Temperature Range -55 C to +150 C (junction) -55Β°C to +175Β°C
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes β€”
Series OptiMOS 2 β€”
Manufacturer β€” Infineon Technologies
Product Series β€” OptiMOS 5
Continuous Drain Current (ID) β€” 50 A (Tc)
Pulsed Drain Current (IDM) β€” 200 A
On-Resistance (RDS(on)) β€” 9.6 mΞ© max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) β€” 60 W (Tc)
Automotive Qualification β€” AEC-Q101

Datasheets & Resources

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