BSC360N15NS3GATMA1 vs BSC265N10LSFGATMA1 Comparison

Detailed side-by-side comparison of BSC360N15NS3GATMA1 by Infineon and BSC265N10LSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon

BSC360N15NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC360N15NS3GATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.72
Manufacturer Infineon Technologies β€”
Part Number BSC360N15NS3GATMA1 β€”
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 2 (TrenchFET)
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Tc 33 A β€”
On-Resistance RDS(on) max at VGS=10V 36 mOhm β€”
Power Dissipation (PD) at Tc 74 W β€”
Gate Threshold Voltage (VGS th) typ 3.0 V β€”
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] β€”
Package PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55Β°C to +150Β°C (junction) -55 C to +150 C (junction)
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level 1 1 (per JEDEC J-STD-020)
FET Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 40 A
Continuous Drain Current (ID, Ta) β€” 6.5 A
Power Dissipation (PD, Tc) β€” 78 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Avalanche Rated β€” Yes
Series β€” OptiMOS 2

Datasheets & Resources

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