BSD235CH6327XTSA1 vs BSC094N06LS5ATMA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSD235CH6327XTSA1

BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™

BSD235CH6327XTSA1 ✓ Active
Infineon
BSC094N06LS5ATMA1

BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon

BSC094N06LS5ATMA1 ✓ Active

Specification Comparison

Parameter BSD235CH6327XTSA1 BSC094N06LS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™
Configuration N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) 20 V 60 V
N-Channel Continuous Drain Current (ID) 950 mA
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity)
Total Power Dissipation (Ptot) 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS™ 5 (logic-level)
Operating Temperature Range -55 °C to +150 °C (junction)
Polarity N-channel + P-channel
Channel Mode Enhancement
RoHS Status Compliant (lead-free) Compliant
MSL Level 1 [DATA_NEEDED: MSL level]
Pin Count 6
Part Number BSC094N06LS5ATMA1
FET Type N-Channel
Continuous Drain Current (ID) at TC=25°C 47 A
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V 9.4 mΩ
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C 36 W
Operating Junction Temperature -55 °C to +150 °C
Package PG-TDSON-8-6 (SuperSO8 5x6)

Datasheets & Resources

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