BSL207SPH6327XTSA1 vs BSS308PEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSL207SPH6327XTSA1 by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSL207SPH6327XTSA1

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSL207SPH6327XTSA1 BSS308PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.33 $0.11
FET Type P-Channel β€”
Technology MOSFET (Metal Oxide) β€”
Drain to Source Voltage (VDS) -20 V β€”
Continuous Drain Current (ID) at 25C 6 A (Ta) β€”
Power Dissipation (PD) 2 W (Ta) 500 mW (Ta)
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] β€”
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] β€”
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
Package TSOP-6 (PG-TSOP6-6) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Series OptiMOSβ„’ β€”
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Pin Count 6 β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS P (small signal / small power MOSFET)
Transistor Type β€” P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) β€” -2 A (Ta)
RDS(on) Max β€” 80 mΞ© at VGS = -10 V
Gate-Source Voltage (VGS) Max β€” +/-20 V
Operating Temperature Range β€” -55 Β°C to +150 Β°C
Package / Case β€” PG-SOT23 (SOT-23-3)
Number of Pins β€” 3
Qualification β€” AEC-Q101 Automotive
Packaging β€” Tape & Reel (T/R)
Standard Reel Quantity β€” 3000 pcs

Datasheets & Resources

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