BSL308CH6327XTSA1 vs BSP129H6327XTSA1 Comparison
Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSP129H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSL308CH6327XTSA1 | BSP129H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.30 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ low-voltage power MOSFETs | β |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | β |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223, 3+Tab) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | β |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | β |
| Total Power Dissipation (Ptot) | 500 mW | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | β |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | β |
| Total Gate Charge (Qg) | 5 nC @ 10 V | β |
| Input Capacitance (Ciss) | 18 pF | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| FET Type | β | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | β | 240 V |
| Continuous Drain Current (ID) at TA=25C | β | 350 mA |
| On-Resistance RDS(on) max | β | 4.2 ohm (some sources 6 ohm) |
| Power Dissipation (PD) at TA=25C | β | 1.8 W |
| Operating Temperature | β | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage VGS(off) | β | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | β | Yes (rated) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Process Technology | β | SIPMOS (vertical DMOS) |
| Drain Terminal | β | Tab (pin 4) |