BSL308CH6327XTSA1 vs BSP135H6327XTSA1 Comparison
Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSP135H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSL308CH6327XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ low-voltage power MOSFETs | β |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | β |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | β |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | β |
| Total Power Dissipation (Ptot) | 500 mW | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | β |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | β |
| Total Gate Charge (Qg) | 5 nC @ 10 V | β |
| Input Capacitance (Ciss) | 18 pF | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C (junction, typical) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| Part Number | β | BSP135H6327XTSA1 |
| FET Type | β | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) | β | 120 mA |
| Power Dissipation (PD) | β | 1.8 W |
| On-Resistance RDS(on) max | β | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | β | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Operating Mode | β | Normally ON (depletion) |
| Technology | β | SIPMOS (planar DMOS) |